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Preliminary SUF-3000 Product Description Sirenza Microdevices' SUF-3000 is a monolithically matched broadband high IP3 gain block covering 0.25-16 GHz. This pHEMT FET-based amplifier uses a patented self-bias Darlington topology featuring a gain and temperature compensating active bias network that operates from a single 5V supply. It offers efficient, cascadable performance in a compact 0.88 x 0.80 mm2 die. It is well-suited for RF, LO, and IF driver applications. Gain & Return Loss vs. Frequency (GSG Probe Data) 12 10 8 Gain (dB) 6 4 IRL 2 0 0 4 8 12 16 20 Fre que ncy (Ghz) -25 -30 ORL \ -20 GAIN 0 -5 -10 -15 Return Loss (dB) 0.25-16 GHz, Cascadable pHEMT MMIC Amplifier Product Features * * * * * * * * Broadband Performance Gain = 10 dB @ 6 GHz P1dB = 15.5 dBm @ 6 GHz Low-noise, Efficient Gain Block 5V Operation, No Dropping Resistor Low Gain Variation vs. Temperature Patented Thermal Design Patented Self-Bias Darlington Circuit Applications * * * * * Broadband Communications Test Instrumentation Military & Space LO and IF Mixer Applications High IP3 RF Driver Applications Symbol Parameters Units Frequency Min. Typ. Max. Gp Small Signal Power Gain dB P1dB Output Power at 1dB Compression dBm OIP3 Output Third Order Intercept Point dBm NF Noise Figure dB IRL Input Return Loss dB ORL Output Return Loss dB Isol VD ID G/T Rth, j-l Reverse Isolation Device Operating Voltage Device Operating Current Device Gain Temperature Coefficient Thermal Resistance (junction-to-backside) dB V mA dB/C C/W 2 GHz 6 GHz 14 GHz 2 GHz 6 GHz 14 GHz 2 GHz 6 GHz 14 GHz 2 GHz 6 GHz 14 GHz 2 GHz 6 GHz 14 GHz 2 GHz 6 GHz 14 GHz 2 GHz 6 GHz 14 GHz 10.0 10.0 8.0 16.0 15.5 13.5 27.0 26.5 19.5 4.2 4.8 5.0 -22.5 -32.5 14.0 -15.0 -16.5 -17.0 -15.5 -15.0 -15.0 5.0 51 -0.01 224 Test Conditions: Test Conditions: VD = 5.0V, ID = 51mA, OIP3 Tone Spacing = 1MHz, Pout per tone = 0 dBm ZS = ZL = 50 Ohms, 25C, GSG Probe Data With Bias Tees VS = 5 V TL = 25C ID = 80 mA Typ. ZS = ZL = 50 Ohms OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm Measured with Bias Tees The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights reserved. 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-105417 Rev A Preliminary SUF-3000 0.25-16 GHz Cascadable MMIC Amplifier Typical Performance (GSG Probe Data) S21 vs . Fre que ncy 20 25C -20C 85C 16 dBm P1dB vs. Frequency 12 10 8 dB 6 4 2 0 0 4 8 12 16 20 Fre que ncy (GHz) -20C 25C 85C 18 14 12 10 0 2 4 6 8 10 12 14 16 18 Fre que ncy (GHz) S11 vs. Frequency 0 -5 -10 dB -15 -20 -25 -30 0 4 8 12 16 20 Fre que ncy (GHz) -20C 25C 85C S22 vs. Frequency 0 -5 -10 dB -15 -20 -25 -30 0 4 8 12 16 20 Fre que ncy (GHz) -20C 25C 85C OIP3 vs. Frequency 30 28 26 dBm 24 dB 7 6 5 4 3 Noise Figure vs. Frequency 22 20 18 16 0 2 4 6 8 10 12 14 16 18 Fre que ncy (GHz) 25C -20C 85C 2 1 0 0 2 4 6 8 10 12 25C -20C 85C 14 16 18 Fre que ncy (GHz) 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 2 http://www.sirenza.com EDS-105417 Rev A Preliminary SUF-3000 0.25-16 GHz Cascadable MMIC Amplifier Typical Performance (GSG Probe Data) Freq (GHz) 0.25 0.5 0.85 2 4 6 10 14 16 VD (V) 5 5 5 5 5 5 5 5 5 Current (mA) 51 51 51 51 51 51 51 51 51 Gain (dB) 10.5 10.0 10.0 10.0 10.0 10.0 9.5 8.0 7.0 P1dB (dBm) OIP3 (dBm) S11 (dB) -17.5 -19.0 -21.0 -22.0 -27.0 -32.0 -17.0 -14.0 -14.5 S22 (dB) -13.5 -14.0 -15.0 -15.0 -15.0 -16.0 -21.0 -17.0 -13.5 NF (dB) 15.5 16.0 16.0 15.5 15.0 13.5 13.0 25.5 27.0 27.5 26.5 24.5 22.5 22.0 4.4 4.2 4.5 4.8 5.5 5.0 5.7 Test Conditions: Test Conditions: GSG Probe Data With Bias Tees, OIP3 Tone Spacing = 1MHz, Pout per tone = 0 dBm, 25C Parameter Max Device Current (ID) Max Device Voltage (VD) Max RF Input Power Absolute Limit 60mA 5.5V 10dBm Max Dissipated Power Max Junction Temperature (TJ) Operating Temperature Range (TL) Max Storage Temp. 330mW 150C -40 to +85C -65 to +150C Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: IDVD < (TJ - TL) / RTH, j-l TL=Backside of die Current Variation vs. Temperature Current vs. Voltage 60 55 50 mA 45 40 35 30 4.75 ELECTROSTATIC SENSITIVE DEVICE Appropriate precautions in handling, packaging and testing devices must be observed. -20C 25C 85C 4.80 4.85 4.90 4.95 5.00 VD 5.05 5.10 5.15 5.20 5.25 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 3 http://www.sirenza.com EDS-105417 Rev A Preliminary SUF-3000 0.25-16 GHz Cascadable MMIC Amplifier Pad Description 1 2 Pad # Function Description 1 2 Die Bottom This pad is DC coupled and matched to 50 Ohms. An external DC block is required. This pad is DC coupled and matched to 50 Ohms. RFOUT / Bias Bias is applied through this pad. RFIN GND Die bottom must be connected to RF/DC ground using silver-filled conductive epoxy. Notes: 1. All Dimensions in Inches [Millimeters]. 2. No connection required for unlabeled bond pads. 3. Die Thickness is 0.004 (0.100). 4. Typical bond pad is 0.004 (0.100) square. 5. Backside metalization: Gold. 6. Backside is Ground. 7. Bond pad metalization: Gold. Device Assembly +5V Interconnect Wire or Ribbon Bypass Cap(s) Choke 50 Line DC Block 50 Line DC Block 3-5 mil gap 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 4 http://www.sirenza.com EDS-105417 Rev A |
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